Full Title: Noise Propagation Study on Gate Drivers Caused by Near Field Coupling inside Medium Voltage High Power SiC-based Converters
Presenter: He Song was selected as the best presenter in Technical Session 3: EMI Analysis and Mitigation at the 2023 CPES Annual Conference.
Advisor: Dushan Boroyevich
Abstract: Unlike the converter-level noise emissions which can be regulated by certain EMI/EMC standards, the noise inside the power converter has no standard to follow. Moreover, even if a converter complies with a certain standards at its terminals, it is not guaranteed to work without issues. Meanwhile, modern power converters consist of many auxiliary circuitries that are subject to malfunction due to the switching noise propagated inside of it. It is of great importance to study the mechanisms by which noise is induced on low-power logic circuitries, caused by the switching transient of the high-power main circuit power stage. This paper is a continuity of our previous work regarding the noise propagation inside the power converter, particularly noise induced on gate driver PCB traces caused by the fast switching of the main circuit via near fields. The noise at the input pins of the critical ICs is the point of interest. Based on the proposed generic methodology, a comprehensive near field noise propagation model on PCB traces is proposed and verified experimentally, and the effects of both magnetic and electric near fields are studied. Factors that influence the noise coupling are also investigated.
Keywords: EMI, gate drivers, SiC converters, Medium Voltage High Power, MV HP